Substrate processing method and substrate processing apparatus
AssigneeRenesas Electronics Corporation
InventorShunsuke Saitou
Life of this patent
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Abstract
A substrate processing method includes: supplying a fluid to a resist on a substrate after an ion implantation in which the resist is used as a mask; and supplying a stripping liquid to the resist for stripping the resist after the supplying the fluid. A cured layer is formed in a surface of the resist in the ion implantation. The fluid is purified water or a mixed fluid of purified water and an inert gas. A volume flow rate of the purified water is not less than 1/400 of a volume flow rate of the inert gas when the mixed fluid is supplied as the fluid.
Claims10
A substrate processing method comprising:
- supplying a mixed fluid of purified water and nitrogen gas to a resist on a substrate after an ion implantation in which said resist is used as a mask;
- and
- supplying a stripping liquid to said resist for stripping said resist after said supplying said fluid,
- wherein a cured layer is formed in a surface of said resist in said ion implantation,
- and
- a volume flow rate of said purified water is not less than 1/400 of a volume flow rate of said nitrogen gas.
A substrate processing method comprising:
- supplying a mixed fluid of purified water and nitrogen gas to a resist on a substrate after an ion implantation in which said resist is used as a mask;
- and
- supplying a stripping liquid to said resist for stripping said resist after said supplying said fluid,
- wherein a cured layer is formed in a surface of said resist in said ion implantation, and
- a volume flow rate of said purified water is between 1/100 and 1/400 of a volume flow rate of said nitrogen gas.
Dependencies are inferred from the claim text.