Removal of metal contaminant deposited on quartz member of vertical heat processing apparatus
AssigneeTokyo Electron Limited
InventorsHitoshi Katoh, Tsuneyuki Okabe, Kohichi Orito, Takashi Chiba
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AssigneeTokyo Electron Limited
InventorsHitoshi Katoh, Tsuneyuki Okabe, Kohichi Orito, Takashi Chiba
Estimating the term…
A method is used for removing a metal contaminant deposited on a quartz member selected from the group consisting of a reaction tube, wafer boat, and heat-insulating cylinder of a vertical heat processing apparatus for a semiconductor process. The method includes obtaining the quartz member unattached to the vertical heat processing apparatus; then, performing diluted hydrofluoric acid cleaning of cleaning the quartz member by use of diluted hydrofluoric acid; then, performing first purified water cleaning of cleaning the quartz member by use of purified water; then, performing hydrochloric acid cleaning of cleaning the quartz member by use of hydrochloric acid; and then, performing second purified water cleaning of cleaning the quartz member by use of purified water.
A method for cleaning a quartz member while removing aluminum contained as a metal contaminant in a surface of the quartz member of a vertical heat processing apparatus for a semiconductor process, the vertical heat processing apparatus including a reaction tube configured to accommodate a plurality of target substrates, a wafer boat configured to stack the target substrates at intervals inside the reaction tube, and a heat-insulating cylinder configured to place the wafer boat thereon inside the reaction tube, the quartz member being selected from the group consisting of the reaction tube, the wafer boat, and the heat-insulating cylinder, the method being a sequence of cleaning the quartz member separated from the vertical heat processing apparatus, the sequence consisting of the steps of:
A system for cleaning a quartz member while removing aluminum contained as a metal contaminant in a surface of the quartz member of a vertical heat processing apparatus for a semiconductor process, the vertical heat processing apparatus including a reaction tube configured to accommodate a plurality of target substrates, a wafer boat configured to stack the target substrates at intervals inside the reaction tube, and a heat-insulating cylinder configured to place the wafer boat thereon inside the reaction tube, the quartz member being selected from the group consisting of the reaction tube, the wafer boat, and the heat-insulating cylinder, the system comprising:
Dependencies are inferred from the claim text.