US 8,297,225 B2 · Capacitive CVD reactor and methods for plasma CVD process

Abstract

A decoupled capacitive CVD reactor is described, which provides improved CVD capabilities, including processing at lower temperatures, performing alternating deposition and etching steps, and performing in situ cleaning of the chamber, without the need for a remote plasma source. Two RF frequencies are coupled to the susceptor, while the anode is grounded. The high frequency RF source is operated so as to control the plasma density, while the low frequency RF source is operated to control species bombardment on the substrate, so as to control the properties of the film being deposited. Additionally, both RF sources may be controlled, together with selection of gasses supplied to the chamber, to operate the chamber either in deposition mode, partial etch mode, etching mode, or cleaning mode.

Claims14

Dependent claims

A capacitively coupled switchable reactor operable in plasma chemical vapor deposition (CVD) mode and etch mode to process a substrate, comprising:

a chamber body;
an anode situated at the ceiling of the chamber body, the anode being coupled to ground;
a gas injection apparatus coupled to a deposition gas source for selectively injecting deposition gas, etching gas, or a mixture of deposition gas and etching gas into the chamber;
a susceptor situated within the chamber body;
a heater situated within the susceptor;
an electrode situated within the susceptor;
a high frequency RF generator coupled to the electrode;
a low frequency RF generator coupled to the electrode;
and,
a controller operable to switch the operational parameters of the gas injection apparatus, the high frequency RF generator and the low frequency RF generator so as to selectively operate the chamber in one of CVD mode, etch mode, and a combined CVD and etch mode.

7 more elements

Dependencies are inferred from the claim text.

Capacitive CVD reactor and methods for plasma CVD process

Life of this patent

Capacitive CVD reactor and methods for plasma CVD process

Life of this patent

Abstract

Claims14