Reactive site deactivation against vapor deposition
AssigneeASM America, Inc.
InventorsEric Shero, Mohith Verghese, Anthony Muscat, Shawn Miller
Life of this patent
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Abstract
Methods and structures relating to the formation of mixed SAMs for preventing undesirable growth or nucleation on exposed surfaces inside a reactor are described. A mixed SAM can be formed on surfaces for which nucleation is not desired by introducing a first SAM precursor having molecules of a first length and a second SAM precursor having molecules of a second length shorter than the first. Examples of exposed surfaces for which a mixed SAM can be provided over include reactor surfaces and select surfaces of integrated circuit structures, such as insulator and dielectric layers.
Claims40
A method of processing, comprising:
- providing an exposed surface;
- supplying a first organic precursor having a first molecular chain length to adsorb a self-assembled monolayer over the exposed surface;
- and
- supplying a second organic precursor having a second molecular chain length that is shorter than the first molecular chain length to adsorb onto reactive sites of the exposed surface on which a self-assembled monolayer is not adsorbed.
A method of processing with a vapor deposition reactor, comprising:
- supplying a first organic precursor to deposit a self-assembled monolayer over portions of a reactor surface;
- and
- supplying a second organic precursor to react with portions of the reactor surface on which the self-assembled monolayer was not deposited, wherein the chain of molecules in the second organic precursor is shorter than the chain of molecules in the first organic precursor.
A method of forming a semiconductor device, comprising:
- providing an integrated circuit structure into a reaction chamber having a first surface and a second surface different from the first surface;
- introducing a first organic precursor into the reaction chamber to coat portions of the first surface with a self-assembled monolayer without coating the second surface;
- purging unreacted first organic precursor that does not coat the first surface from the reaction chamber;
- introducing a second organic precursor into the reaction chamber to react with reactive sites of the first surface that are not coated with the first organic precursor;
- and
- purging unreacted second organic precursor that does not react with reactive sites from the reaction chamber.
An integrated film structure, comprising:
- a first surface and a second adjacent surface different from the first exposed surface;
- and
- a mixed hydrophobic film adsorbed on the first surface without forming on the second surface, the film comprising a plurality of first chain organic molecules and a plurality of second chain organic molecules, the second chain organic molecules being shorter than the first chain organic molecules.
Dependencies are inferred from the claim text.