Tunnel junction resistor for high resistance devices and systems using the same
AssigneeInternational Business Machines Corporation
InventorIcko E. T. Iben
Life of this patent
Estimating the term…
Abstract
A device in one embodiment includes a plurality of tunnel junction resistors coupled in series; a first lead coupled to one end of the plurality of tunnel junction resistors coupled in series; and a second lead coupled to another end of the plurality of tunnel junction resistors coupled in series. A device in another embodiment includes a magnetoresistive sensor; a plurality of tunnel junction resistors coupled in series; a first lead coupling one end of the magnetoresistive sensor to one end of the plurality of tunnel junction resistors coupled in series; and a second lead coupling another end of the magnetoresistive sensor to another end of the plurality of tunnel junction resistors coupled in series.
Claims13
A device, comprising:
- a plurality of tunnel junction resistors coupled in series;
- a first lead coupled to one end of the plurality of tunnel junction resistors coupled in series;
- and
- a second lead coupled to another end of the plurality of tunnel junction resistors coupled in series,
- wherein at least some of the tunnel junction resistors share a common tunnel barrier layer extending as a continuous layer between the tunnel junction resistors that share the common tunnel barrier layer,
- wherein at least four tunnel junction resistors are coupled in series.
A device comprising:
- a plurality of tunnel junction resistors coupled in series;
- a first lead coupled to one end of the plurality of tunnel junction resistors coupled in series;
- and
- a second lead coupled to another end of the plurality of tunnel junction resistors coupled in series,
- wherein at least some of the tunnel junction resistors share a common tunnel barrier layer extending as a continuous layer between the tunnel junction resistors that share the common tunnel harder layer, and
- wherein a breakdown voltage of the plurality of tunnel junction resistors coupled in series is at least 4 volts.
A device, comprising:
- magnetoresistive sensor;
- a plurality of tunnel junction resistors coupled in series;
- a first lead coupling one end of the magnetoresistive sensor to one end of the plurality of tunnel junction resistors coupled in series;
- and
- a second lead coupling another end of the magnetoresistive sensor to another end of the plurality of tunnel junction resistors coupled in series, wherein at least some of the tunnel junction resistors share a common tunnel barrier layer extending as a continuous layer between the tunnel junction resistors that share the common tunnel barrier layer.
A system, comprising:
- a semiconductor device;
- a plurality of tunnel junction resistors coupled in series;
- a first lead coupling one end of the semiconductor device to one end of the plurality of tunnel junction resistors coupled in series;
- and
- a second lead coupling another end of the semiconductor device to another end of the plurality of tunnel junction resistors coupled in series, wherein at least some of the tunnel junction resistors share a common tunnel barrier layer extending as a continuous layer between the tunnel junction resistors that share the common tunnel barrier layer.
Dependencies are inferred from the claim text.