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US 8,288,741 B1Granted
Apparatus and method for three dimensional ion processing
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsTimothy J. Miller, Ludovic Godet
Life of this patent
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Abstract
A method for treating a workpiece. The method includes directing a first ion beam to a first region of a workpiece, wherein the first ion beam has a first ion angular profile of first ions extracted through an aperture of an extraction plate. The method also includes directing a second ion beam to the first region of the workpiece, wherein the second ion beam has a second ion angular profile different than the first ion profile of second ions extracted through the aperture of the extraction plate.
Claims16
A method of treating a workpiece, comprising:
- directing a first ion beam to a first region of a workpiece, the first ion beam having a first ion angular profile of first ions extracted through an aperture of an extraction plate;
- and
- directing a second ion beam to the first region of the workpiece, the second ion beam having a second ion angular profile different than the first ion profile of second ions extracted through the aperture of the extraction plate.
A processing system, comprising:
- an RF generator configured to send an RF signal to generate a plasma;
- a workpiece holder configured to receive a bias with respect to the plasma to attract ions across a plasma sheath toward a workpiece;
- an extraction plate having an aperture configured to provide an ion beam having ions distributed over a range of angles of incidence on the workpiece;
- and
- a controller configured to send control signals to the RF generator to change amplitude of the RF signal in an alternating fashion between a first amplitude and a second amplitude, in a series of exposure cycles that each comprise a first and a second exposure of ions, each first and second exposure of ions corresponding to the respective first and second amplitudes and comprising a respective first and a second ion angular profile of ions extracted through the aperture.
2 more elements
Dependencies are inferred from the claim text.