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US 8,284,810 B1Granted
Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
AssigneeSoraa, Inc.
InventorsRajat Sharma, Eric M. Hall, Christiane Poblenz, Mark P. D'Evelyn
Life of this patent
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Abstract
An edge emitting solid state laser and method. The laser comprises at least one AlInGaN active layer on a bulk GaN substrate with a non-polar or semi-polar orientation. The edges of the laser comprise {1 1 −2 ±6} facets. The laser has high gain, low threshold currents, capability for extended operation at high current densities, and can be manufactured with improved yield. The laser is useful for optical data storage, projection displays, and as a source for general illumination.
Claims22
A laser diode device comprising:
- a wurtzite-structure crystalline substrate containing a gallium species;
- an active epitaxial layer within the wurtzite-structure;
- and
- at least one end facet for edge emission coupled to the active epitaxial layer, the end facet being a cleaved surface within ±5 degrees of a {1 1 −2 6} or a {1 1 −2 −6} crystallographic orientation;
- wherein the orientation of the wurtzite-structure crystalline substrate is within ±5 degrees of a {8 0 −8 7} plane, a {8 0 −8 −7} plane, a {4 4 −8 7} plane, or a {4 4 −8 −7} plane.
2 more elements
A laser device comprising:
- a gallium nitride or aluminum nitride containing crystalline material;
- a laser cavity formed within a portion of the gallium nitride or aluminum nitride containing crystalline material, the laser cavity being characterized by a length extending from a first end to a second opposite end;
- a first facet provided on the first end;
- a second facet provided on the second end;
- wherein the length of the laser cavity is along a direction that is approximately 28.5 degrees from a [0001] direction of the gallium nitride or aluminum nitride containing crystalline material.
2 more elements
A semiconductor crystalline device comprising:
- a wurtzite-structure crystalline substrate with a surface orientation being within ±5 degrees of a {8 0 −8 7} plane, a {8 0 −8 −7} plane, a {4 4 −8 7} plane, or a {4 4 −8 −7} plane;
- an epitaxial layer within the wurtzite structure;
- and
- at least one end facet coupled to the active epitaxial layer, the end facet being a cleaved surface within ±5 degrees of a {1 1 −2 6} or a {1 1 −2 −6} crystallographic orientation.
1 more element
Dependencies are inferred from the claim text.