Data sensing module and sensing circuit for flash memory
AssigneeWinbond Electronics Corp.
InventorWei-Chih Liao
Life of this patent
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Abstract
A sensing circuit for a flash memory is provided. The sensing circuit includes a first transistor, a detector, and a charge circuit. A drain of the first transistor is coupled to a bias, a gate thereof receives an inverted signal, and a source thereof receives a data. In addition, the drain of the first transistor is further coupled to the detector. Therefore, the detector detects a voltage of the drain of the first transistor. When the voltage of the drain is lower than a threshold voltage, the detector enables a control signal. The charge circuit charges the source of the first transistor when the control signal is enabled, until the voltage of the drain of the first transistor reaches the threshold voltage.
Claims6
A data sensing module of a flash memory, comprising:
- a memory core circuit, wherein the memory core circuit comprises:
- a first memory cell;
- a second memory cell;
- a second transistor, having a gate receiving a first bit line signal, a source coupled to the first memory cell, and a drain coupled to a source of a first transistor;
- a third transistor, having a gate receiving a second bit line signal, a source coupled to the second memory cell, and a drain coupled to the source of the second transistor;
- and
- a fourth transistor, having a gate receiving a word line signal, a source coupled to a common voltage, and a drain coupled to the source of the third transistor;
- a first transistor, having a drain coupled to a bias, a gate receiving an inverted signal, and the source coupled to the memory core circuit for receiving data stored in the memory core circuit;
- a detector, coupled to the drain of the first transistor for detecting a voltage of the drain, wherein a control signal is directly enabled by the detector when the voltage of the drain is lower than a threshold voltage and the control signal is directly disabled by the detector when the voltage of the drain reaches the threshold voltage;
- and
- a charge circuit, coupled to the detector and the source of the first transistor, wherein the charge circuit charges the source of the first transistor when the control signal is enabled, and stops charging the source of the first transistor when the control signal is disabled and the voltage of the drain reaches the threshold voltage, the source of the first transistor being charged to a settling voltage that is higher than the threshold voltage.
Dependencies are inferred from the claim text.