Semiconductor memory device comprising three-dimensional memory cell array

A method of forming a semiconductor memory device, the method comprising:

• providing a substrate;
• forming a chamber on the substrate;
• depositing a plurality of alternating insulating layers and sacrificial layers in the chamber, each layer having a horizontal first portion and at least one inclined second portion;
• forming a hole substantially normal to the substrate and extending through the layers to the substrate;
• depositing a vertically inclined memory string into the hole, the memory string comprising a plurality of storage cells;
• replacing the sacrificial layers with conductive layers to form a plurality of elongated word lines, respectively;
• and
• connecting first alternating word lines of the plurality to conductive lines disposed at a first side of the memory string, and second alternating word lines of the plurality to conductive lines disposed at a second side of the memory string.

A semiconductor memory device comprising:

• a substrate;
• a memory string disposed on and substantially normal to the substrate, the memory string comprising a plurality of storage cells;
• and
• a plurality of word lines, each word line including a first portion substantially parallel to the substrate and coupled to the memory string and a second portion substantially inclined relative to the substrate and extending upwardly,
• wherein first alternating word lines of the plurality of word lines are electrically connected to first conductive lines disposed at a first side of the memory string, and second alternating word lines of the plurality of word lines are electrically connected to second conductive lines disposed at a second side of the memory string.

A semiconductor memory device comprising:

• a substrate;
• a memory string disposed on and substantially normal to the substrate, the memory string comprising a plurality of storage cells;
• and
• a plurality of word lines, each word line including a first portion substantially parallel to the substrate and coupled to the memory string and a second portion substantially inclined relative to the substrate and extending upwardly,
• wherein the word lines comprise first word lines selectively connected to first conductive lines disposed at a first side of the memory string, and second word lines selectively connected to second conductive lines disposed at a second side of the memory string.

A semiconductor memory device comprising:

• a substrate;
• a memory string disposed on and substantially normal to the substrate, the memory string comprising a plurality of storage cells;
• a plurality of word lines;
• and
• at least two row decoders,
• wherein the plurality of word lines includes a first group of word lines electrically connected to one row decoder at a first side of the memory string and a second group of word lines electrically connected to the other row decoder at a second side of the memory string.

A method of forming a semiconductor memory device, the method comprising:

• providing a substrate;
• forming a chamber on the substrate;
• depositing a plurality of alternating insulating layers and conductive layers in the chamber, the conductive layers forming a plurality of word lines, each layer having a horizontal first portion and at least one inclined second portion;
• forming a hole substantially normal to the substrate and extending through the layers to the substrate;
• depositing a vertically inclined memory string into the hole, the memory string comprising a plurality of storage cells;
• and
• connecting first alternating word lines of the plurality of word lines to contact pads disposed at a first side of the memory string, and second alternating word lines of the plurality of word lines to contact pads disposed at a second side of the memory string.