Nonvolatile memory device and related programming method
AssigneeSamsung Electronics Co., Ltd.
InventorsHan Woong Yoo, Jae Hong Kim, Jun Jin Kong
Life of this patent
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Abstract
A method of programming a nonvolatile memory device comprises programming memory cells connected to a first wordline, programming memory cells connected to a second wordline, programming memory cells connected to a third line between the first wordline and the second wordline, and adjusting a threshold voltage of the memory cells connected to the first wordline to compensate for interference generated by the programming of the memory cells connected to the third wordline.
Claims20
A method of programming a nonvolatile memory device, comprising:
- programming memory cells connected to a first wordline;
- programming memory cells connected to a second wordline;
- programming memory cells connected to a third wordline disposed between the first wordline and the second wordline;
- and
- adjusting respective threshold voltages of the memory cells connected to the first wordline to compensate for interference caused by the programming of the memory cells connected to the third wordline.
A method of programming a multi-level cell nonvolatile memory device, comprising:
- programming a first page of data in memory cells connected to a first wordline of the nonvolatile memory device;
- programming a second page of data in memory cells connected to a second wordline of the nonvolatile memory device;
- and
- programming a third page of data in memory cells connected to a third wordline of the nonvolatile memory device between the first wordline and the second wordline,
- wherein the third page of data is programmed after the first and second pages of data.
A method of programming a multi level cell nonvolatile memory device, comprising:
- programming a first page into memory cells connected to a first wordline;
- programming a second page into memory cells connected to a second wordline;
- programming a third page into memory cells connected to a third wordline between the first wordline and the second wordline, and
- programming a fourth page into memory cells connected to the third wordline;
- wherein the third and fourth pages are programmed in the memory cells connected to the third wordline after the first and second pages are programmed in the memory cells connected to the respective first and second wordlines.
Dependencies are inferred from the claim text.