Multi-port memory having a variable number of used write ports
AssigneeFreescale Semiconductor, Inc.
InventorsAndrew C. Russell, Shayan Zhang
Life of this patent
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Abstract
A multi-port memory is operated according to a method. Data is written, in a first mode, to a storage node of a memory cell from a first port through a first conductance. The first mode is characterized by a power supply voltage being applied at a power node at a first level. Data is written, in a second mode, to the storage node of the memory cell simultaneously from the first port through the first conductance and a second port through a second conductance. The second mode is characterized by the power supply voltage being applied at the power node at a second level different from the first level.
Claims19
A multi-port memory, comprising:
- a memory cell having a storage node;
- a first pass transistor coupled between the storage node and a first port;
- a second pass transistor coupled between the storage node and a second port;
- and
- write means coupled to the first port and the second port for:
- writing data in a first mode to the storage node from one of the first port and the second port through one of the first pass transistor and the second pass transistor, respectively, when the multi-port memory is powered by a first voltage at a power supply node;
- and
- writing data in a second mode to the storage node simultaneously from the first port and the second port simultaneously through the first pass transistor and the second pass transistor when the multi-port memory is powered by a second voltage different than the first voltage at the power supply node.
A method of operating a multi-port memory comprising:
- writing data in a first mode to a storage node of a memory cell from a first port through a first conductance, wherein the first mode is characterized by a power supply voltage being applied at a power node at a first level;
- and
- writing data in a second mode to the storage node of the memory cell simultaneously from the first port through the first conductance and a second port through a second conductance, wherein the second mode is characterized by the power supply voltage being applied at the power node at a second level different from the first level.
A method of operating a multi-port memory:
- writing data through a first port, independent of operation of a second port, to a storage node of a memory in a first mode of operation;
- and
- simultaneously writing data through the first port and the second port to the storage node in a second mode of operation,
- wherein:
- the first mode is characterized by the multi-port memory being operated at a first temperature;
- and
- the second mode is characterized by the multi-port memory being operated at a second temperature, wherein the second temperature differs from the first temperature.
Dependencies are inferred from the claim text.