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US 8,284,590 B2Granted
Integratable programmable capacitive device
AssigneeBoise State University
InventorKristy A. Campbell
Life of this patent
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Abstract
A circuit with a capacitive device is disclosed. The circuit may comprise a capacitive device connected between a first conductor and a second conductor. The capacitive device may comprise a first electrode connected to the first conductor and a second electrode being connected to the second conductor. A chalcogenide layer may be connected to the first electrode and to a metal chalcogenide layer.
Claims20
A circuit comprising:
- a capacitive device, the capacitive device comprising:
- a first conductor;
- a chalcogenide layer connected to the first conductor;
- a metal chalcogenide layer connected to the chalcogenide layer;
- and
- a second conductor connected to the metal chalcogenide layer,
- wherein the capacitive device is configured to store charge.
4 more elements
A memory circuit comprising:
- a capacitive device connected to a sensing device,
- the capacitive device comprising
- a first conductor;
- a chalcogenide layer connected to the first conductor;
- a metal chalcogenide layer connected to the chalcogenide layer;
- and
- a second conductor connected to the metal chalcogenide layer;
- wherein the capacitive device is configured to store a charge.
5 more elements
A method comprising:
- providing a capacitive device comprising a metal chalcogenide layer disposed between a first conductor and a second conductor;
- connecting the first conductor and the second conductor to a source;
- applying a first voltage across the first and second conductors with the source;
- storing charge from the applied voltage in the capacitive device,
- wherein the charge is substantially stored in the metal chalcogenide layer.
2 more elements
Dependencies are inferred from the claim text.