Tunneling junction magnetoresistive effect element and manufacturing method thereof

A tunneling junction magnetoresistive effect head, comprising:

• at least one tunneling junction magnetoresistive effect element, each tunneling junction magnetoresistive effect element comprising:
• a ground layer;
• an antiferromagnetic layer above the ground layer;
• a first ferromagnetic layer above the antiferromagnetic layer and exchange-coupled to the antiferromagnetic layer;
• an anti-parallel coupling layer above the first ferromagnetic layer;
• a second ferromagnetic layer having a magnetic moment coupled anti-parallel to the magnetic moment of the first ferromagnetic layer via the anti-parallel coupling layer;
• an insulation barrier layer above the second ferromagnetic layer;
• and
• a third ferromagnetic layer above the insulation barrier layer,
• wherein at least a portion of the second ferromagnetic layer and at least a portion of the third ferromagnetic layer on an insulation barrier layer side are comprised of a crystal, and
• wherein the insulation barrier layer comprises MgO and an oxide material having an independent cubic crystal structure and complete solid solubility with MgO.

A method for manufacturing a tunneling junction magnetoresistive effect element, the method comprising:

• forming a ground layer above a substrate;
• forming an antiferromagnetic layer above the ground layer;
• forming a first ferromagnetic layer above the antiferromagnetic layer;
• forming an anti-parallel coupling layer above the first ferromagnetic layer;
• forming a second ferromagnetic layer above the anti-parallel coupling layer;
• forming an insulation barrier layer above the second ferromagnetic layer after the second ferromagnetic layer,
• wherein the insulation barrier layer comprises an oxide alloy comprising a first oxide material and a second oxide material,
• wherein the oxide alloy is formed via discharging two cathodes mounted with an MgO target as the first oxide material and a target of the second oxide material which has an independent cubic crystal structure and complete solid solubility with MgO in a vacuum;
• and
• forming a third ferromagnetic layer above the insulation barrier layer.