Methods and systems for determining a characteristic of a wafer

A method for determining reflectivity of a film formed on a wafer, comprising:

• generating output responsive to light from the wafer using an inspection system, wherein the output comprises first output corresponding to defects on the wafer and second output that does not correspond to the defects, and wherein the first and second output are generated by the same detector;
• and
• determining a value for the reflectivity of the film formed on the wafer using the second output and not the first output, wherein said determining comprises determining the value for the reflectivity of the film using a predetermined correlation between the second output and the reflectivity of the film, wherein the reflectivity of the film is a non-defect related characteristic of the wafer that can be measured using a metrology tool.

A method for determining a polish uniformity of a film formed on a wafer, comprising:

• generating output responsive to light from the wafer using an inspection system, wherein the output comprises first output corresponding to defects on the wafer and second output that does not correspond to the defects, and wherein the first and second output are generated by the same detector;
• and
• determining a value for the polish uniformity of the film formed on the water using the second output and not the first output, wherein said determining comprises determining the value for the polish uniformity of the film using a predetermined correlation between the second output and the polish uniformity of the film, wherein the polish uniformity of the film is a non-defect related characteristic of the wafer that can be measured using a metrology tool, and wherein the polish uniformity of the film is a physical quantity of the wafer.

A method for determining a resistivity of a film formed on a wafer, comprising:

• generating output responsive to light from the wafer using an inspection system, wherein the output comprises first output corresponding to defects on the wafer and second output that does not correspond to the defects, and wherein the first and second output are generated by the same detector;
• and
• determining a value for the resistivity of the film formed on the water using the second output and not the first output, wherein said determining comprises determining the value for the resistivity of the film using a predetermined correlation between the second output and the resistivity of the film, wherein the resistivity of the film is a non-defect related characteristic of the wafer that can be measured using a metrology tool, and wherein the resistivity of the film is a physical quantity of the wafer.

A method for determining a grain size of a film formed on a wafer, comprising:

• generating output responsive to light from the wafer using an inspection system, wherein the output comprises first output corresponding to defects on the wafer and second. output that does not correspond to the defects, and wherein the first and second output are generated by the same detector;
• and
• determining a value for the grain size of the film formed on the wafer using the second output and not the first output, wherein said determining comprises determining the value for the grain size of the film using a predetermined correlation between the second output and the grain size of the film, wherein the grain size of the film is a non-defect related characteristic of the wafer that can be measured using a metrology tool, and wherein the grain size of the film is a physical quantity of the wafer.