Silicon light-emitting element

A silicon light-emitting element comprising:

• a first conductivity type silicon substrate having a first surface and a second surface on a side opposite to the first surface;
• an insulating film provided on the first surface of the silicon substrate;
• a silicon layer provided on the insulating film, and having a second conductivity type different from the first conductivity type;
• a first electrode provided on the silicon layer;
• and
• a second electrode provided on the second surface of the silicon substrate, wherein
• the silicon layer has a carrier concentration of 5×1015 cm−3 to 5×1018 cm−3 ,
• the silicon substrate has a carrier concentration of 1×1017 cm−3 to 5×1019 cm−3, and that is larger by one digit or more than the carrier concentration of the silicon layer, and
• the insulating film has a film thickness of 0.3 nm to 5 nm so that tunneling effect of carrier occurs.

A silicon light-emitting element comprising:

• a silicon substrate having a first surface;
• a first conductivity type first silicon layer provided on the first surface of the silicon substrate, and having a first region, a second region, and a third region disposed in order along the first surface;
• a first electrode provided on each of the first region and the third region of the first silicon layer;
• an insulating film provided on the second region of the first silicon layer;
• a second silicon layer provided on the insulating film, and having a second conductivity type different from the first conductivity type;
• and
• a second electrode provided on the second silicon layer, wherein
• the first silicon layer has a carrier concentration of 5×1015 cm−3 to 5×1018 cm−3,
• the second silicon layer has a carrier concentration of 1×1017 cm−3 to 5×1019 cm−3, and that is larger by one digit or more than the carrier concentration of the first silicon layer, and
• the insulating film has a film thickness of 0.3 nm to 5 nm so that tunneling effect of carrier occurs.

A silicon light-emitting element comprising:

• a silicon substrate having a first surface;
• a first conductivity type first silicon layer provided on the first surface of the silicon substrate, and having a first region, a second region, and a third region disposed in order along the first surface;
• a first electrode provided on each of the first region and the third region of the first silicon layer;
• an insulating film provided on the second region of the first silicon layer;
• a second silicon layer provided on the insulating film, and having a second conductivity type different from the first conductivity type;
• and
• a second electrode provided on the second silicon layer, wherein
• the second silicon layer has a carrier concentration of 5×1015 cm−3 to 5×1018 cm−3,
• the first silicon layer has a carrier concentration of 1×1017 cm−3 to 5×1019cm−3, and that is larger by one digit or more than the carrier concentration of the second silicon layer, and
• the insulating film has a film thickness of 0.3 nm to 5 nm so that tunneling effect of carrier occurs.