Amplification type solid state imaging device

An amplification type solid state imaging device comprising:

• a light receiving portion formed by arranging on a semiconductor substrate one-dimensionally or two-dimensionally a plurality of pixels that convert incident light to signal charge and output electric signals corresponding to the amount of the signal charge,
• a reader for reading out sequentially the electric signals from the respective pixels,
• a noise rejection circuit for suppressing spurious signals for the electric signals read out by the reader,
• a first light-shielding layer positioned on the upper part of the light-receiving portion so as to restrict entry of light into the light-receiving portion other than a part for photoelectric conversion,
• a second light-shielding layer provided on the upper part of the noise rejection circuit so as to restrict entry of light into the noise rejection circuit,
• an electroconductive third light-shielding layer formed in a spacing between the light-receiving portion and the noise rejection circuit, as a layer below the first light-shielding layer and the second light-shielding layer, so as to overlap partially with the first light-shielding layer and the second light-shielding layer in a direction of thickness of the semiconductor substrate, and
• wirings capable of applying voltages separately and respectively to the first light-shielding layer, the second light-shielding layer and the third light-shielding layer.