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US 8,284,012 B2Granted
Ultra-stable refractory high-power thin film resistors for space applications
AssigneeThe Aerospace Corporation
InventorsRobert C. Cole, Gouri Radhakrishnan
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Abstract
A method of fabricating a thin film resistor including providing a substrate, using a low-temperature pulsed-laser deposition process to deposit a titanium carbide (TiC) layer on the substrate, removing portions of the TiC layer with an etching process to leave a TiC pattern on the substrate, and depositing conductive material on opposite ends of the TiC pattern to provide a thin film resistor.
Claims21
A method of fabricating a thin film resistor, the method comprising the steps of:
- providing a substrate;
- using a room temperature pulsed-laser deposition process on a target to deposit a titanium carbide (TiC) layer on the substrate;
- removing portions of the TiC layer with an etching process to leave a TiC thin film layer patterned on the substrate;
- and
- forming conductive terminals by depositing conductive material on opposite ends of the TiC pattern to provide ohmic contacts on opposite ends of the TiC thin film layer to provide a TiC thin film resistor;
- wherein the TiC thin film layer has a crystalline structure mimicking the crystallinity of a target utilized during the room temperature pulsed-laser deposition process of depositing the TiC thin film layer on the substrate.
3 more elements
An electronics component, comprising:
- a substrate;
- a titanium carbide (TiC) thin film layer patterned on the substrate;
- and
- conductive terminals formed to provide ohmic contacts on opposite ends of the TiC thin film layer to provide a TiC thin film resistor;
- wherein the TiC thin film layer has a crystalline structure mimicking the crystallinity of a target utilized during a room temperature pulsed-laser deposition process of depositing the TiC thin film layer on the substrate.
2 more elements
Dependencies are inferred from the claim text.