Semiconductor apparatus

A semiconductor apparatus comprising:

• a divided voltage generation circuit that includes a first resistor element and a first transistor connected in series between a first power supply and a second power supply and generates a divided voltage by dividing a voltage difference between a voltage of the first power supply and a voltage of the second power supply based on a resistance ratio of the first resistor element and the first transistor specified according to a level of a first current flowing to the first transistor;
• and
• a current control circuit that includes a second transistor that is connected in a mirror configuration to the first transistor and determines the level of the first current by a control current flowing from a drain terminal to a source terminal of the second transistor, and increases and decreases the control current according to an increase and decrease in a voltage difference between the first power supply and a ground power supply, wherein
• the current control circuit includes:
• a circuit that includes a resistor group of at least one resistor element connected in series with a third transistor, the third transistor having a drain terminal and a gate terminal short-circuited connected in series between the first power supply and the ground power supply and outputs a power supply detection voltage that increases and decreases according to an increase and decrease in the voltage of the first power supply from any one of a node between resistors of the resistor group and a node between a resistor of the resistor group and the third transistor;
• and
• a third resistor element that is placed between a node outputting the power supply detection voltage and the second transistor and sets a level of the control current, and
• the second transistor has the source terminal connected to the second power supply and has the drain terminal and a gate terminal short-circuited.

A semiconductor apparatus that generates a second power supply based on a first power supply and a ground power supply, comprising:

• a divided voltage generation circuit that includes a first resistor element and a first transistor connected in series between the first power supply and the second power supply and generates a divided voltage by dividing a voltage difference between a voltage of the first power supply and a voltage of the second power supply based on a resistance ratio of the first resistor element and the first transistor specified according to a level of a first current flowing to the first transistor;
• a current control circuit that includes a second transistor that is connected in a mirror configuration to the first transistor and determines the level of the first current by a control current flowing from a first terminal to a second terminal of the second transistor, and increases and decreases the control current according to an increase and decrease in a voltage difference between the first power supply and a ground power supply;
• and
• a voltage control circuit that controls the voltage of the second power supply to a target voltage determined by the voltage of the first power supply and the resistance ratio based on the divided voltage.

A semiconductor apparatus comprising:

• a divided voltage generation circuit that includes a resistor element and an element with a resistance value varying according to a control current, and outputs a third voltage by dividing a first voltage being a positive voltage and a second voltage being a negative voltage;
• and
• a current control circuit that outputs the control current to the divided voltage generation circuit based on a voltage difference between the first voltage and a ground voltage,
• wherein the current control circuit reduces variations of the third voltage due to variations of the first voltage by increasing the control current when the first voltage rises and decreasing the control current when the first voltage drops.