Light emitting device and method for manufacturing the same

A method for manufacturing a light emitting device, comprising the steps of:

• forming a thin film transistor including a semiconductor layer over a first substrate;
• forming a first insulating film comprising a SiOx film including an alkyl group over the thin film transistor;
• removing part of the first insulating film so that an opening portion is formed in the first insulating film;
• forming an anode containing SiOx over the first insulating film wherein the anode is electrically connected to the semiconductor layer;
• forming a second insulating film covering an edge portion of the anode;
• forming a layer containing an organic compound over the anode;
• forming a cathode over the layer containing the organic compound;
• and
• sealing the light emitting element by attaching a second substrate to the first substrate with a sealant.

A method for manufacturing a light emitting device, comprising the steps of:

• forming a thin film transistor including a semiconductor layer over a first substrate;
• forming a first insulating film comprising a SiOx film including an alkyl group over the thin film transistor;
• removing part of the first insulating film so that an opening portion is formed in the first insulating film;
• forming an anode containing SiOx over the first insulating film wherein the anode is electrically connected to the semiconductor layer;
• forming a second insulating film covering an edge portion of the anode;
• forming a layer containing an organic compound over the anode;
• forming a cathode over the layer containing the organic compound;
• and
• sealing the light emitting element by attaching a second substrate to the first substrate with a sealant so that the sealant is in contact with a peripheral portion of the first insulating film.

A method for manufacturing a light emitting device, comprising the steps of:

• forming a thin film transistor including a semiconductor layer over a first substrate;
• forming a first insulating film comprising a SiOx film including an alkyl group over the thin film transistor;
• removing part of the first insulating film so that an opening portion is formed in the first insulating film and the first insulating film has a taper portion;
• forming an anode containing SiOx over the first insulating film wherein the anode is electrically connected to the semiconductor layer;
• forming a second insulating film covering an edge portion of the anode;
• forming a layer containing an organic compound over the anode;
• forming a cathode over the layer containing the organic compound;
• and
• sealing the light emitting element by attaching a second substrate to the first substrate with a sealant so that the sealant is in contact with the taper portion.

A method for manufacturing a light emitting device comprising the steps of:

• forming a thin film transistor including a semiconductor layer having a source region, a drain region, and a channel formation region therebetween, a gate insulating film, and a gate electrode over a first substrate having an insulating surface;
• forming a highly thermostable planarizing film over an uneven shape reflected by the thin film transistor;
• forming an opening portion which has a tapered shape on a side face and is located over the source region or the drain region and a peripheral portion which has a tapered shape by selectively removing the highly thermostable planarizing film;
• forming a contact hole which reaches the source region or the drain region by selectively removing the gate insulating film;
• forming an electrode which reaches the source region or the drain region;
• forming an anode containing SiOx which is in contact with the electrode;
• forming a bank covering an edge portion of the anode;
• forming a layer containing an organic compound over the anode;
• forming a cathode over the layer containing the organic compound;
• and
• attaching a second substrate to the first substrate with a sealant, wherein the bank is a SiOx film including an alkyl group formed by application.