US 8,283,791 B2 · Semiconductor device and method for manufacturing same

Abstract

According to one embodiment, a semiconductor device includes a plurality of first interconnects, a second interconnect, a third interconnect, and a plurality of conductive members. The plurality of first interconnects are arranged periodically to extend in one direction. The second interconnect is disposed outside a group of the plurality of first interconnects to extend in the one direction. The third interconnect is provided between the group and the second interconnect. The plurality of conductive members are disposed on a side opposite to the group as viewed from the second interconnect. A shortest distance between the first interconnect and the third interconnect, a shortest distance between the third interconnect and the second interconnect, and a shortest distance between the first interconnects are equal. A shortest distance between the second interconnect and the conductive member is longer than the shortest distance between the first interconnects.

Claims20

Dependent claims

A semiconductor device, comprising:

a plurality of first interconnects arranged periodically to extend in one direction;
a second interconnect disposed outside a group of the plurality of first interconnects to extend in the one direction;
a third interconnect provided between the group and the second interconnect;
and
a plurality of conductive members disposed on a side opposite to the group as viewed from the second interconnect,
a shortest distance between the first interconnect and the third interconnect, a shortest distance between the third interconnect and the second interconnect, and a shortest distance between the first interconnects being equal,
a shortest distance between the second interconnect and the conductive member being longer than the shortest distance between the first interconnects.

4 more elements

A method for manufacturing a semiconductor device, comprising:

forming a first insulating film on a semiconductor substrate, a first region and a second region being set alternately in the semiconductor substrate along a first direction;
forming a second insulating film on the first insulating film;
forming a third insulating film on the second insulating film;
forming a first resist pattern on the third insulating film, the first resist pattern including a plurality of line patterns arranged periodically along the first direction in the second region to extend in a second direction orthogonal to the first direction;
dividing the third insulating film into a plurality of line portions by etching method using the first resist pattern as a mask;
reducing a width of the line portion;
forming a sidewall on a side face of the line portion;
removing the line portion;
forming a second resist pattern in a region of the first region separated from the sidewall, an opening being provided in an interior of the second resist pattern;
making a trench in a region of the second insulating film between the sidewalls and in a region of the second insulating film between the sidewall and the second resist pattern, and making a recess in a region of the second insulating film directly under the opening, by etching method using the sidewall and the second resist pattern as a mask;
and
forming an interconnect in an interior of the trench and a conductive film in an interior of the recess by filling a conductive material into the interior of the trench and the interior of the recess,
a shortest distance from the opening to an outer edge of the second resist pattern on the second region side being longer than a width of the sidewall.

10 more elements

A method for manufacturing a semiconductor device, comprising:

forming a first insulating film on a semiconductor substrate, a first region and a second region being set alternately in the semiconductor substrate along a first direction;
forming a first contact in the first insulating film in the first region;
forming a second insulating film on the first insulating film;
forming a third insulating film on the second insulating film;
forming a first resist pattern on the third insulating film, the first resist pattern including a plurality of line patterns arranged periodically along the first direction in the second region to extend in a second direction orthogonal to the first direction;
dividing the third insulating film into a plurality of line portions by etching method using the first resist pattern as a mask;
reducing a width of the line portion;
forming a sidewall on a side face of the line portion;
removing the line portion;
forming a second resist pattern in a region of the first region separated from the sidewall;
making a trench in a region of the second insulating film between the sidewalls and in a region of the second insulating film between the sidewall and the second resist pattern by etching method using the sidewall and the second resist pattern as a mask;
forming a first interconnect in an interior of the trench made in the region between the sidewalls and a second interconnect in an interior of the trench made in the region between the sidewall and the second resist pattern by filling a conductive material in the interiors of the trench made in the region between the sidewalls and the trench made in the region between the sidewall and the second resist pattern;
and
forming a second contact on the first contact to connect the first contact,
a shortest distance between the first contact and the second interconnect and a shortest distance between the second contact and the second interconnect being greater than a shortest distance between the first interconnects.

12 more elements

Dependencies are inferred from the claim text.

Semiconductor device and method for manufacturing same

Life of this patent

Semiconductor device and method for manufacturing same

Life of this patent

Abstract

Claims20