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US 8,283,786 B2Granted
Integrated circuit system with contact integration
AssigneeAdvanced Micro Devices, Inc.
InventorPaul R. Besser
Life of this patent
Estimating the term…
Abstract
A method for forming an integrated circuit system includes providing an integrated circuit device; and forming an integrated contact over the integrated circuit device including: providing a via over the integrated circuit device; forming a selective metal in the via; forming at least one nanotube over the selective metal; and forming a cap over the nanotubes.
Claims9
An integrated circuit system comprising:
- an integrated circuit device including a silicide layer over portions of the integrated circuit device;
- and
- an integrated contact electrically connected to the integrated circuit device, the integrated contact including:
- a via over the silicide layer;
- a selective metal in the via;
- at least one nanotube over the selective metal;
- and
- a cap over the nanotubes.
5 more elements
Dependencies are inferred from the claim text.