Lead frame based semiconductor package and a method of manufacturing the same

A semiconductor package comprising:

• a surface for attachment to a device by a joint formed of a connective material in a joint area of the surface, the joint to be disposed between the surface and the device;
• one or more channels on the surface, said one or more channels extending away from the joint area of the surface towards an edge of the surface, each channel having two elongated sides;
• a strengthening element within each channel at a point between the two elongated sides;
• a compound in said one or more channels to interact with the connective material, such that when the semiconductor package is attached to the device the interaction has defined one or more paths which correspond to the one or more channels on the surface and which allow the passage of waste material away from the joint area to the outer edge of the surface;
• and
• wherein the compound has a wettability less than that of the surface.

A semiconductor package comprising:

• a surface for attachment of the semiconductor package to a device by a joint formed of a connective material in a heat transfer joint area of the surface;
• one or more channels in the heat transfer joint area of the surface, wherein the joint is disposed between the surface and the device, the surface further including a plurality of connector joint areas;
• said one or more channels having two elongated sides and said one or more channels including a strengthening element at a point between the two elongated sides wherein the strengthening element is substantially arcuate in cross-section and substantially bow-shaped in plan view;
• one or more paths in the connective material which correspond to the one or more channels in the heat transfer joint area of the surface and which allow the passage of waste material away from the heat transfer joint area to the outer edge of the surface;
• and
• said one or more paths formed by a compound applied to said one or more channels, wherein said compound interacts with the connective material substantially located in each channel when the semiconductor package was attached to the device.