Multichip semiconductor device, chip therefor and method of formation thereof
AssigneeKabushiki Kaisha Toshiba
InventorsNobuo Hayasaka, Katsuya Okumura, Keiichi Sasaki, Mie Matsuo
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Abstract
A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.
Claims8
A multichip semiconductor device including a plurality of chips stacked on each other, each of the chips having a semiconductor substrate on which circuit components are formed, wherein
- two adjacent chips included in the plurality of chips are electrically connected to each other via a connecting substrate provided between the two adjacent chips, wherein each of the two adjacent chips comprises:
- a first interlayer insulating film formed above a surface of the semiconductor substrate;
- a through hole passing through the semiconductor substrate and the first interlayer insulating film;
- a conductive plug formed entirely within the through hole;
- a second interlayer insulating film formed on the first interlayer insulating film;
- and
- a metal interconnection which passes through the second interlayer insulating film and which connects to a portion of the conductive plug, an area of the portion being smaller than a cross-sectional area of the conductive plug;
- and
- the conductive plugs of the two adjacent chips are electrically connected to each other via the connecting substrate.
Dependencies are inferred from the claim text.