Semiconductor device
AssigneeRenesas Electronics Corporation
InventorRyuichi Okamura
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Abstract
A semiconductor device, which exhibits an increased design flexibility for a capacitor element, and can be manufactured with simple method, is provided. A semiconductor device 100 includes: a silicon substrate 101; an interlayer film 103 provided on the silicon substrate 101; a multiple-layered interconnect embedded in the interlayer film 103; a flip-chip pad 111, provided so as to be opposite to an upper surface of an uppermost layer interconnect 105 in the multiple-layered interconnect and having a solder ball 113 for an external coupling mounted thereon; and a capacitance film 109 provided between said uppermost layer interconnect 105 and the flip-chip pad 111. Such semiconductor device 100 includes the flip-chip pad 111 composed of an uppermost layer interconnect 105, a capacitive film 109 and a capacitor element 110.
Claims8
A semiconductor device, comprising:
- a semiconductor substrate;
- an insulating interlayer on said semiconductor substrate;
- a multiple-layered interconnect embedded in said insulating interlayer;
- an electrode pad provided so as to be opposite an upper surface of an uppermost layer of said multiple-layered interconnect, said electrode pad having a bump electrode for an external coupling mounted thereon;
- and
- a first insulating film interposed between said uppermost layer of said multiple-layered interconnect and said electrode pad, said first insulating film consisting of a single material contacting an entirety of an uppermost surface of said uppermost layer of said multiple-layered interconnect, said first insulating film covering an upper portion of said insulating interlayer and having a concave portion provided in a region opposite said uppermost surface of said uppermost layer of said multiple-layered interconnect, thereby forming a capacitor element with said uppermost layer of said multiple-layered interconnect and said electrode pad,
- wherein a thickness of said first insulating film is reduced in the region where said concave portion is formed, and a capacitance is formed in the region of said first insulating film having the reduced thickness.
Dependencies are inferred from the claim text.