Low loss substrate for integrated passive devices
AssigneeFreescale Semiconductors, Inc.
InventorsXiaowei Ren, Wayne R. Burger, Colin Kerr, Mark A. Bennett
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AssigneeFreescale Semiconductors, Inc.
InventorsXiaowei Ren, Wayne R. Burger, Colin Kerr, Mark A. Bennett
Estimating the term…
Electronic elements having an active device region and integrated passive device (IPD) region on a common substrate preferably include a composite dielectric region in the IPD region underlying the IPD to reduce electro-magnetic (E-M) coupling to the substrate. Mechanical stress created by plain dielectric regions and its deleterious affect on performance, manufacturing yield and occupied area may be avoided by providing electrically isolated inclusions in the composite dielectric region of a material having a thermal expansion coefficient (TEC) less than that of the dielectric material in the composite dielectric region. For silicon substrates, non-single crystal silicon is suitable for the inclusions and silicon oxide for the dielectric material. The inclusions preferably have a blade-like shape separated by and enclosed within the dielectric material.
An electronic assembly, comprising:
An electronic element incorporating an integrated passive device (IPD) and an active device, comprising:
Dependencies are inferred from the claim text.