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US 8,283,746 B2Granted
Solid-state imaging device and method of manufacturing solid-state imaging device
AssigneeSony Corporation
InventorsYuichi Yamamoto, Hayato Iwamoto
Life of this patent
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Abstract
A solid state imaging device having a back-illuminated type structure in which a lens is formed on the back side of a silicon layer with a light-receiving sensor portion being formed thereon. Insulating layers are buried into the silicon layer around an image pickup region, with the insulating layer being buried around a contact layer that connects an electrode layer of a pad portion and an interconnection layer of the surface side. A method of manufacturing such a solid-state imaging device is also provided.
Claims10
A solid-state image pickup device comprising:
- a structure including at least a silicon layer, a light-receiving portion including at least one photodiode for effecting photoelectric-conversion formed in said silicon layer, an interconnection layer formed on a surface side of said silicon layer, and a lens formed at a rear side opposite to said surface side of said silicon layer;
- a pad on said rear side of said silicon layer;
- a first insulating layer formed on a sidewall of said pad;
- and
- a second insulating layer formed at a peripheral portion of the light-receiving portion.
2 more elements
A solid-state image pickup device comprising:
- a silicon layer that has an upper surface that is parallel to a lower surface;
- a photoelectric-conversion portion including at least one photodiode;
- an interconnection layer on a lower surface side of the silicon layer;
- a pad portion that extends through the silicon layer;
- a filter portion,
- wherein the photoelectric-conversion portion is configured along a first axis that is parallel to and between the upper and lower surfaces, and
- wherein the filter portion is configured on the upper surface and configured along a second axis that aligns with the photoelectric-conversion portion and that is normal to the first axis;
- and
- an insulating layer
- that traverses through the silicon layer such that an upper end of the insulating layer is flush with the upper surface of the silicon layer and a lower end of the insulating layer protrudes past the lower surface of the silicon layer,
- that is peripheral to the photoelectric-conversion portion, and
- that has a reflectivity different from the silicon layer.
9 more elements
Dependencies are inferred from the claim text.