Method of fabricating backside-illuminated image sensor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuan-Chieh Huang, Dun-Nian Yaung, Chih-Jen Wu, Chen-Ming Huang
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Abstract
Provided is a method of fabricating a backside illuminated image sensor that includes providing a device substrate having a frontside and a backside, where pixels are formed at the frontside and an interconnect structure is formed over pixels, forming a re-distribution layer (RDL) over the interconnect structure, bonding a first glass substrate to the RDL, thinning and processing the device substrate from the backside, bonding a second glass substrate to the backside, removing the first glass substrate, and reusing the first glass substrate for fabricating another backside-illuminated image sensor.
Claims7
A backside-illuminated image sensor, comprising:
- a device substrate having a frontside and backside;
- a plurality of pixels disposed at the frontside of the device substrate;
- an interconnect structure disposed over the pixels;
- a first glass substrate bonded to the frontside of the device substrate;
- a second glass substrate bonded to the backside of the device substrate;
- a re-distribution layer (RDL) disposed on the first glass substrate;
- and
- a sidewall contact assembly for coupling the RDL and the interconnect structure.
Dependencies are inferred from the claim text.