Thin-wafer current sensors
AssigneeInfineon Technologies AG
InventorsMario Motz, Udo Ausserlechner
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Abstract
Embodiments relate to IC current sensors fabricated using thin-wafer manufacturing technologies. Such technologies can include processing in which dicing before grinding (DBG) is utilized, which can improve reliability and minimize stress effects. While embodiments utilize face-up mounting, face-down mounting is made possible in other embodiments by via through -contacts. IC current sensor embodiments can present many advantages while minimizing drawbacks often associated with conventional IC current sensors.
Claims18
A thin-wafer integrated circuit current sensor comprising:
- a current conductor;
- a thin-wafer semiconductor chip substantially free of dicing defects more than about 10 micrometers (μm) inward from chip edges;
- at least one magnetic field sensing element arranged on a surface of the thin-wafer semiconductor chip;
- and
- an isolation layer between the current conductor and the thin-wafer semiconductor chip.
A thin-wafer integrated circuit current sensor comprising:
- a current conductor;
- a thin-wafer semiconductor chip having at least one over-etched dicing-before-grinding (DBG) edge, the at least one edge comprising a defect region extending inward about 10 micrometers (μm) from the at least one edge;
- at least one magnetic field sensing element arranged on the thin-wafer semiconductor chip;
- and
- an isolation layer between the current conductor and the thin-wafer semiconductor chip.
Dependencies are inferred from the claim text.