Optimized free layer for spin torque magnetic random access memory
AssigneeInternational Business Machines Corporation
InventorsGuohan Hu, Jonathan Z. Sun, Daniel Christopher Worledge
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Abstract
A magnetic tunnel junction stack that includes a pinned magnetic layer, a tunnel barrier layer formed of magnesium oxide (MgO), and a free magnetic layer formed adjacent to the tunnel barrier layer and of a material having a magnetization perpendicular to an MgO interface of the tunnel barrier layer and with a magnetic moment per unit area within a factor of 2 of approximately 2 nanometers (nm)×300 electromagnetic units per cubic centimeter (emu/cm3).
Claims20
A magnetic tunnel junction stack comprising:
- a pinned magnetic layer;
- a tunnel barrier layer formed of magnesium oxide (MgO);
- and
- a free magnetic layer formed adjacent to the tunnel barrier layer and of a material having a magnetization perpendicular to the tunnel barrier layer and with a product of a magnetic moment per unit area and a thickness within a factor of 2 of approximately 2 nanometers (nm)×300 electromagnetic units per cubic centimeter (emu/cm3);
- wherein the free magnetic layer further includes a body centered tetragonal (BCT) crystal structure.
A spin-torque based magnetic random access memory device comprising:
- a magnetic tunnel junction stack comprising:
- a pinned magnetic layer,
- a tunnel barrier layer formed of magnesium oxide (MgO), and
- a free magnetic layer formed adjacent to the tunnel barrier layer and of a material having a magnetization perpendicular to the tunnel barrier layer and with a product of a magnetic moment per unit area and a thickness within a factor of 2 of approximately 2 nanometers (nm)×300 electromagnetic units per cubic centimeter (emu/cm3);
- wherein the free magnetic layer further includes a body centered tetragonal (BCT) crystal structure.
A spin-torque based magnetic random access memory device comprising:
- a magnetic tunnel junction stack comprising:
- a pinned magnetic layer,
- a tunnel barrier layer formed of magnesium oxide (MgO), and
- a free magnetic layer formed adjacent to the tunnel barrier layer and formed of manganese aluminum (MnAl), the free magnetic layer having a magnetization perpendicular to the tunnel barrier layer and with a product of a magnetic moment per unit area and a thickness within a factor of 2 of approximately 2 nanometers (nm)×300 electromagnetic units per cubic centimeter (emu/cm3)
- wherein the free magnetic layer further includes a body centered tetragonal (BCT) crystal structure.
Dependencies are inferred from the claim text.