Semiconductor device and method of manufacturing the same
AssigneeFujitsu Semiconductor Limited
InventorsTomohiko Tsutsumi, Taiji Ema, Hideyuki Kojima, Toru Anezaki
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Abstract
The semiconductor device includes a first MIS transistor including a gate insulating film 92, a gate electrode 108 formed on the gate insulating film 92 and source/drain regions 154, a second MIS transistor including a gate insulating film 96 thicker than the gate insulating film 92, a gate electrode 108 formed on the gate insulating film 96, source/drain regions 154 and a ballast resistor 120 connected to one of the source/drain regions 154, a salicide block insulating film 146 formed on the ballast resistor 120 with an insulating film 92 thinner than the gate insulating film 96 interposed therebetween, and a silicide film 156 formed on the source/drain regions 154.
Claims6
A semiconductor device comprising:
- a first MIS transistor having a first gate insulating film, a first gate electrode formed above the first gate insulating film and a first source/drain regions near the first gate electrode in a first region;
- a second MIS transistor having a second gate insulating film thicker than the first gate insulating film, a second gate electrode formed above the second gate insulating film and a second source/drain regions near the second gate electrode in a second region;
- an ESD protection element including a resistor connected to the second MIS transistor;
- a salicide block insulating film formed over the resistor with an insulating film thinner than the second gate insulating film interposed therebetween;
- and a silicide film formed on the first source/drain regions and the second source/drain regions;
- wherein the resistor includes at least two different impurity diffusion profiles, wherein one of the two different impurity diffusion profiles having a peak near a region beneath the insulating film.
Dependencies are inferred from the claim text.