Memory element and semiconductor device, and method for manufacturing the same

A semiconductor device including a plurality of memory elements each of which comprises:

• a first conductive layer and a second conductive layer that is beside the first conductive layer with an interval “d”;
• a first conductive fine particle that overlaps the first conductive layer,
• a second conductive fine particle interposed between the first conductive layer and the second conductive layer;
• and
• a third conductive fine particle that overlaps the second conductive layer,
• wherein the first conductive layer is over and in contact with an insulating film,
• wherein the second conductive layer is over and in contact with the insulating film, and
• wherein the first and second conductive layers are electrically connectable or electrically connected to each other at least through the second conductive fine particle as a result in applying voltage between the first conductive layer and the second conductive layer.

A semiconductor device including a memory element which comprises:

• a first conductive layer and a second conductive layer that is beside the first conductive layer with an interval “d”;
• a layer including:
• a first conductive fine particle that overlaps the first conductive layer;
• a second conductive fine particle that overlaps a region between the first conductive layer and the second conductive layer;
• and
• a third conductive fine particle that overlaps the second conductive layer,
• wherein the first conductive layer is over and in contact with an insulating film,
• wherein the second conductive layer is over and in contact with the insulating film,
• wherein the layer is in contact with a portion of the insulating film between the first conductive layer and the second conductive layer, and
• wherein the first and second conductive layers are electrically connectable or electrically connected to each other at least through the second conductive fine particle.