Semiconductor device having an enhanced well region

A metal oxide silicon (MOS) field effect transistor device, comprising:

• a source region formed onto a semiconductor substrate;
• a drain region formed onto the semiconductor substrate;
• a gate region formed onto the semiconductor substrate between the source region and the drain region;
• and
• an enhanced well region formed onto the semiconductor substrate between the source region and the gate region, the enhanced well region including:
• a first well region portion having a first doping density, and
• a second well region portion having a second doping density, the first doping density and the second doping density being different,
• wherein a side of the first well region portion is offset from the source region by a first distance and a side of the second well region portion is offset from the source region by a second distance, the first distance being less than the second distance, and
• wherein a ratio of the first distance to the second distance is between:
• 0.2
• <
• A
• B
• ≤
• 1
• ,
• where A represents the first distance and B represents the second distance.

A metal oxide silicon (MOS) field effect transistor device, comprising:

• a source region formed onto a semiconductor substrate;
• a drain region formed onto the semiconductor substrate;
• a gate region formed onto the semiconductor substrate between the source region and the drain region forming a gate region;
• and
• an enhanced well region formed onto the semiconductor substrate between the source region and the gate region, the enhanced well region including a first implant region having a first doping density, a second implant region having a second doping density, and a third implant region having a third doping density, the third doping density being a combination of the first doping density and the second doping density.