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US 8,283,711 B2Granted
Non-volatile memory devices having data storage layer
AssigneeSamsung Electronics Co., Ltd.
InventorsYoung-gu Jin, Yoon-dong Park, Won-joo Kim, Seung-hoon Lee, Suk-pil Kim
Life of this patent
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Abstract
Provided are a non-volatile memory device, which may have a stacked structure and may be easily integrated at increased density, and a method of fabricating and using the non-volatile memory device. The non-volatile memory device may include at least one pair of first electrode lines. At least one second electrode line may be between the at least one pair of first electrode lines. At least one data storage layer may be between the at least one pair of first electrode lines and the at least one second electrode line and may locally store a resistance change.
Claims18
A non-volatile memory device comprising:
- at least one pair of first electrode lines;
- at least one second electrode line between the at least one pair of first electrode lines;
- at least one data storage layer between the at least one pair of first electrode lines and the at least one second electrode line and locally storing a resistance change, wherein the at least one pair of first electrode lines is adjacent to each other and are not electrically connected to each other;
- a first word line electrically connecting even first electrode lines among the plurality of first electrode lines;
- and
- a second word line electrically connecting odd first electrode lines among the plurality of first electrode lines,
- wherein the at least one pair of first electrode lines comprise a semiconductor of a first conductive type, and the at least one second electrode line comprises a semiconductor of a second conductive type that is opposite to the first conductive type.
4 more elements
A non-volatile memory device comprising:
- at least one pair of first electrode lines;
- at least one second electrode line between the at least one pair of first electrode lines;
- at least one data storage layer between the at least one pair of first electrode lines and the at least one second electrode line and locally storing a resistance change, wherein the at least one pair of first electrode lines is adjacent to each other and are not electrically connected to each other;
- a first semiconductor layer of a first conductive type between the at least one second electrode line and the at least one data storage layer;
- and
- a second semiconductor layer of a second conductive type, which is opposite to the first conductive type, between the first semiconductor layer and the at least one second electrode line,
- wherein the at least one pair of first electrode lines comprise a semiconductor of a first conductive type, and the at least one second electrode line comprises a semiconductor of a second conductive type that is opposite to the first conductive type.
4 more elements
A non-volatile memory device comprising:
- at least one pair of first electrode lines;
- at least one second electrode line between the at least one pair of first electrode lines;
- and
- at least one data storage layer between the at least one pair of first electrode lines and the at least one second electrode line and locally storing a resistance change, wherein the at least one pair of first electrode lines is adjacent to each other and are not electrically connected to each other, wherein
- the at least one pair of first electrode lines includes a first electrode line, a second first electrode line, a third first electrode line, and a fourth first electrode line on substantially the same plane such that the second first electrode line is between the first electrode line and the third first electrode line, the third first electrode line is between the second first electrode line and the fourth first electrode line, and the second first electrode line and the third first electrode line are between the first first electrode line and the fourth first electrode line,
- the first electrode line and the third first third electrode line are electrically connected to a first word line and the second first electrode line and the fourth first electrode line are connected to a second word line, and the first electrode line and the third first electrode line are not electrically connected to the second word line and the second first electrode line and the fourth first electrode line are not electrically connected to the first word line,
- the at least one second electrode line is a plurality of second electrode lines between the first electrode line and the second first electrode line, the second first electrode line and the third first electrode line, and the third first electrode line and the fourth first electrode line, and
- the at least one data storage layer is a plurality of data storage layers between the plurality of second electrode lines and the first electrode line, the second first electrode line, the third first electrode line, and the fourth first electrode line,
- wherein the at least one pair of first electrode lines comprise a semiconductor of a first conductive type, and the at least one second electrode line comprises a semiconductor of a second conductive type that is opposite to the first conductive type.
6 more elements
Dependencies are inferred from the claim text.