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US 8,283,710 B2Granted
Low dark current image sensors with epitaxial SiC and/or carbonated channels for array transistors
AssigneeMicron Technology, Inc.
InventorChandra Mouli
Life of this patent
Estimating the term…
Abstract
A pixel cell having a substrate with a isolation channel formed of higher carbon concentrate such as SiC or carbonated silicon. The channel comprising SiC or carbonated silicon is provided over the substrate of the pixel cell to reduce the dark current leakage.
Claims20
A pixel cell comprising:
- a substrate having a pixel cell area containing a transistor region and a photo-conversion region;
- a photo-conversion device formed at said photo-conversion region;
- transistors formed at said transistor region;
- a carbon containing conductive isolation material disposed over said substrate at least at said transistor region;
- and
- a plurality of transistor gate stacks associated with operating transistors of said pixel cell, said gate stacks formed over said isolation material.
3 more elements
A pixel cell comprising:
- a photoconversion device formed on a substrate;
- at least one transistor formed on said substrate for operating said pixel cell and comprising source and drain regions and a channel between said source and drain regions;
- a carbon containing conductive isolation material disposed over said source and drain regions;
- and
- a transistor gate stack formed over said isolation material and over said channel.
2 more elements
A pixel cell comprising:
- a substrate having a pixel cell area defined by pixel isolation regions;
- a photodiode formed in said pixel cell area;
- an epitaxial carbon containing material provided on said substrate and at least within said pixel cell area;
- and
- a transistor gate stack provided in said pixel cell area on said carbon containing material,
- wherein said carbon containing material is also provided over said substrate outside said pixel cell area.
3 more elements
A pixel cell comprising:
- a substrate having a pixel cell area;
- a photo-conversion device formed on said substrate in said pixel cell area;
- a carbon containing conductive isolation material having a higher bandgap than said substrate, wherein said carbon containing conductive isolation material is disposed on a periphery portion of said pixel cell area on said substrate and is not disposed on another portion of said pixel cell area;
- and
- a transistor gate stack formed directly over said carbon containing conductive isolation material.
2 more elements
Dependencies are inferred from the claim text.