Semiconductor structure

A semiconductor structure comprising:

• I. a silicide substrate having a top surface and two doping areas formed thereon;
• II. a nitride layer disposed on the top surface of silicide substrate, wherein
• (a) a recess structure is formed into the nitride layer and the silicide substrate, the recess structure having a long symmetrical axis and a short symmetrical axis, wherein the doping areas of the silicide substrate are respectively arranged on the opposite sides of the recess structure above the bottom portion thereof and expose from the respective side walls of the recess structure,
• (b) the silicide substrate defines an etched space therein at the bottom portion of the recess structure, the etched space having a cross section wider than that of the recess structure,
• (c) a protruding structure is exposingly formed in the etched space on the silicide substrate at the bottom surface of the recess structure;
• III. a pair of trench isolation areas disposed on the opposite sides of the silicide substrate and the recess along the long symmetrical axis, wherein each trench isolation areas having an overlying structure comprising an OX liner, a strain SiN liner, a SOD, and a HDP disposed from bottom to top in the above order;
• and
• IV. a strained nitride coating selectively disposed on the side wall that defines the recess structure and covering the exposed portion of the doping area on the side wall of the recess structure above the bottom portion thereof.