Solid state Klystron
AssigneeInternational Business Machines Corporation
InventorPaul M. Solomon
Life of this patent
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Abstract
A solid state Klystron structure is fabricated by forming a source contact and a drain contact to both ends of a conducting wire and by forming a bias gate and a signal gate on the conducting wire. The conducting wire may be at least one carbon nanotube or at least one semiconductor wire with long ballistic mean free paths. By applying a signal at a frequency that corresponds to an integer multiple of the transit time of the ballistic carriers between adjacent fingers of the signal gate, the carriers are bunched within the conducting wire, thus amplifying the current through the solid state Klystron at a frequency of the signal to the signal gate, thus achieving a power gain.
Claims16
A carbon nanotube solid state Klystron structure comprising:
- at least one carbon nanotube;
- a source contact to said at least one carbon nanotube;
- a drain contact to said at least one carbon nanotube;
- a signal gate with at least two signal fingers, wherein said at least two signal fingers are located on said at least one carbon nanotube and between said source contact and said drain contact;
- and
- a bias gate with at least one bias finger, wherein said at least one bias finger is located on said at least one carbon nanotube.
A semiconductor solid state Klystron structure comprising:
- at least one semiconductor wire;
- a source contact to said at least one semiconductor wire;
- a drain contact to said at least one semiconductor wire;
- a signal gate with at least two signal fingers, wherein said at least two signal fingers are located on said at least one semiconductor wire and between said source contact and said drain contact;
- and
- a bias gate with at least one bias finger, wherein said at least one bias finger is located on said at least one semiconductor wire.
Dependencies are inferred from the claim text.