Field effect transistor and manufacturing method thereof
AssigneeFurukawa Electric Co., Ltd.
InventorsYoshihiro Sato, Takehiko Nomura
Life of this patent
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Abstract
A field effect transistor includes a channel layer of group-III nitride-based compound semiconductor; an interface layer formed on the channel layer and of AlXInYGa1-X-YN, where 0≦X≦1, 0≦Y≦1, and X+Y≦1, which is different from material of the channel layer, an electron supplying layer of group-III nitride-based compound semiconductor formed on the interface layer, the electron supplying layer having a recess that reaches the interface layer; a source electrode and a drain electrode formed on the electron supplying layer on respective sides of the recess; an insulating film formed on an inner surface of the recess; and a gate electrode formed on the insulating film.
Claims9
A field effect transistor comprising:
- a channel layer of first group-III nitride-based compound semiconductor;
- an interface layer of second group-III nitride-based compound semiconductor, wherein the interface layer has a thickness that does not cause a 2-dimensional electron gas in the channel layer;
- an electron supplying layer of third group-III nitride-based compound semiconductor formed on the interface layer, the electron supplying layer having a recess that reaches the interface layer;
- a source electrode and a drain electrode formed on the electron supplying layer on respective sides of the recess;
- an insulating film formed on an inner surface of the recess;
- and
- a gate electrode formed on the insulating film.
A field effect transistor comprising:
- a channel layer of first group-III nitride-based compound semiconductor;
- an interface layer of second group-III nitride-based compound semiconductor formed on a first portion of the channel layer;
- an electron supplying layer of third group-III nitride-based compound semiconductor formed on second portions of the channel layer on both sides of the interface layer across the first portion;
- a source electrode and a drain electrode formed on the electron supplying layer on respective sides;
- an insulating film formed on the interface layer;
- and
- a gate electrode foamed on the insulating film.
A field effect transistor comprising:
- a channel layer of first group-III nitride-based compound semiconductor, wherein the first group-III nitride-based compound semiconductor is AlXbYGa1-X-YN, where 0≦X≦1, 0≦Y≦1, and X+Y≦1;
- an interface layer of second group-III nitride-based compound semiconductor, wherein the second group-III nitride-based compound semiconductor is AlXInYGa1-X-YN, where 0≦X≦1, 0≦Y≦1, and X+Y≦1, and the second group-III nitride-based compound semiconductor has a larger bandgap energy than the third group-III nitride-based compound semiconductor;
- an electron supplying layer of third group-III nitride-based compound semiconductor formed on the interface layer, the electron supplying layer having a recess that reaches the interface layer;
- a source electrode and a drain electrode formed on the electron supplying layer on respective sides of the recess;
- an insulating film formed on an inner surface of the recess;
- and
- a gate electrode formed on the insulating film.
Dependencies are inferred from the claim text.