GaN substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device
AssigneeSumitomo Electric Industries, Ltd.
InventorsKeiji Ishibashi, Akihiro Hachigo, Masato Irikura, Seiji Nakahata
Life of this patent
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Abstract
A GaN substrate on which an epitaxially grown layer of good quality can be formed is obtained. A GaN substrate as a group III nitride substrate has a surface in which the number of chlorine atoms per square centimeter of the surface is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface is not more than 3×1013, wherein a plane orientation of the surface is any of a (0001) plane, a (11-20) plane, a (10-12) plane, a (10-10) plane, a (20-21) plane, a (10-11) plane, a (11-21) plane, a (11-22) plane, and a (11-24) plane of a wurtzite structure.
Claims6
A GaN substrate, having a surface in which a number of chlorine atoms per square centimeter of said surface is not more than 2×1014, and a number of silicon atoms per square centimeter of said surface is not more than 3×1013,
- wherein a plane orientation of said surface is any of a (0001) plane, a (11-20) plane, a (10-12) plane, a (10-10) plane, a (20-21) plane, a (10-11) plane, a (11-21) plane, a (11-22) plane, and a (11-24) plane of a wurtzite structure, and
- wherein the chlorine atoms and the silicon atoms adhere to the surface of the substrate.
Dependencies are inferred from the claim text.