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US 8,283,690 B2Granted
Light emitting device having light extraction structure and method for manufacturing the same
AssigneesLG Innotek Co., Ltd., LG Electronics Inc.
InventorsHyun Kyong Cho, Sun Kyung Kim, Jun Ho Jang
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Abstract
A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
Claims15
A light emitting device comprising:
- a support layer;
- a reflective electrode;
- a semiconductor layer having a multi-layer structure, the semiconductor layer comprising a first-type semiconductor layer on the reflective electrode, a light emitting layer on the first-type semiconductor layer, and a second-type semiconductor layer on the light emitting layer, wherein a thickness of the first-type semiconductor layer is corresponding to constructive interference condition between a light emitted from the light emitting layer and a light reflected by the reflective electrode;
- and
- a light extraction structure on the semiconductor layer.
2 more elements
Dependencies are inferred from the claim text.