Semiconductor device having light-emitting element and light-receiving element for transmitting among circuits formed over the plurality of substrates

A semiconductor device comprising:

• a first substrate provided with a first circuit including a first semiconductor element and a light-emitting element;
• and
• a second substrate provided with a second circuit including a second semiconductor element and a light-receiving element,
• wherein the light-emitting element which comprises an electroluminescent layer interposed between a pair of electrodes is formed over an insulating film, in which laser light is oscillated in the light-emitting element upon applying current to the electroluminescent layer;
• wherein the electroluminescent layer is adjacent to a conductive film which is formed over the insulating film;
• wherein the laser light oscillated from the electroluminescent layer is reflected by the conductive film;
• wherein a first electrical signal output from the first circuit is converted into a light signal using the laser light by the light-emitting element over the first substrate;
• and
• wherein the light signal is converted into a second electrical signal over the second substrate, and a waveform shaping of the second electrical signal is performed to input the second electrical signal to the second circuit.

A semiconductor device comprising:

• a first substrate comprising a first semiconductor element and a light-emitting element;
• and
• a second substrate comprising a second semiconductor element, a light-receiving element and an amplifier circuit,
• wherein the light-emitting element which comprises an electroluminescent layer interposed between a pair of electrodes is formed over an insulating film, in which laser light is oscillated in the light-emitting element upon applying current to the electroluminescent layer;
• wherein the electroluminescent layer is adjacent to a conductive film formed over the insulating film;
• wherein the laser light oscillated from the electroluminescent layer is reflected by the conductive film;
• wherein a light signal using the laser light is converted into an electrical signal over the second substrate;
• and
• wherein the electrical signal is amplified by the amplifier circuit.

A semiconductor device comprising:

• a first substrate comprising a first semiconductor element and a light-emitting element;
• and
• a second substrate comprising a second semiconductor element and a light-receiving element,
• wherein the light-emitting element which comprises an electroluminescent layer interposed between a pair of electrodes is formed over an insulating film, in which laser light is oscillated in the light-emitting element upon applying current to the electroluminescent layer;
• wherein the electroluminescent layer is adjacent to a conductive film formed over the insulating film;
• wherein the laser light oscillated from the electroluminescent layer is reflected by the conductive film;
• and
• wherein an electrical signal is converted into a light signal using the laser light over the first substrate.

A semiconductor device comprising:

• a first substrate comprising a first semiconductor element and a light-emitting element;
• and
• a second substrate comprising a second semiconductor element and a light-receiving element,
• wherein the light-emitting element which comprises an electroluminescent layer interposed between a pair of electrodes is formed over an insulating film, in which laser light is oscillated in the light-emitting element upon applying current to the electroluminescent layer;
• wherein the electroluminescent layer is adjacent to a conductive film formed over the insulating film;
• wherein the laser light oscillated from the electroluminescent layer is reflected by the conductive film;
• wherein a first electrical signal is converted into a light signal using the laser light over the first substrate;
• and
• wherein the light signal is converted into a second electrical signal over the second substrate.

A semiconductor device comprising:

• a first substrate comprising a first semiconductor element, a light-emitting element and a driving unit;
• and
• a second substrate comprising a second semiconductor element and a light-receiving element,
• wherein the light-emitting element which comprises an electroluminescent layer interposed between a pair of electrodes is formed over an insulating film, in which laser light is oscillated in the light-emitting element upon applying current to the electroluminescent layer;
• wherein the electroluminescent layer is adjacent to a conductive film formed over the insulating film;
• wherein the laser light oscillated from the electroluminescent layer is reflected by the conductive film;
• and
• wherein light emission of the light-emitting element is controlled using an electrical signal by the driving unit, thereby forming a light signal.

A semiconductor device comprising:

• a first substrate comprising a first semiconductor element and a light-emitting element;
• and
• a second substrate comprising a second semiconductor element and a light-receiving element,
• wherein the light-emitting element which comprises an electroluminescent layer interposed between a pair of electrodes is formed over an insulating film, in which laser light is oscillated in the light-emitting element upon applying current to the electroluminescent layer;
• wherein the electroluminescent layer is adjacent to a conductive film formed over the insulating film;
• wherein the laser light oscillated from the electroluminescent layer is reflected by the conductive film;
• and
• wherein a light signal using the laser light is received by the light-receiving element.