Nitride semiconductor light-emitting device
AssigneePanasonic Corporation
InventorsToshiyuki Takizawa, Tetsuzo Ueda, Manabu Usuda
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Abstract
A nitride semiconductor light-emitting device includes a substrate (101) made of silicon, a mask film (102) made of silicon oxide, formed on a principal surface of the substrate (101), and having at least one opening (102a), a seed layer (104) made of GaN selectively formed on the substrate (101) in the opening (102a), an LEG layer (105) formed on a side surface of the seed layer (104), and an n-type GaN layer (106), an active layer (107), and a p-type GaN layer (108) which are formed on the LEG layer (105). The LEG layer (105) is formed by crystal growth using an organic nitrogen material as a nitrogen source.
Claims13
A nitride semiconductor light-emitting device comprising:
- a substrate;
- a mask film formed on a principal surface of the substrate and having at least one opening;
- a first nitride semiconductor layer selectively formed on the substrate in the opening;
- a second nitride semiconductor layer formed on a side surface of the first nitride semiconductor layer excluding a surface of the first nitride semiconductor layer parallel to the principal surface of the substrate;
- and
- a third nitride semiconductor layer formed on the second nitride semiconductor layer and including an emission layer.
Dependencies are inferred from the claim text.