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US 8,283,674 B2Granted
Semiconductor device with silicon carbide channel
AssigneeSumitomo Electric Industries, Ltd.
InventorsTakeyoshi Masuda, Shinji Matsukawa
Life of this patent
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Abstract
MOSFET is provided with SiC film. SiC film has a facet on its surface, and the length of one period of the facet is 100 nm or more, and the facet is used as channel. Further, a manufacturing method of MOSFET includes: a step of forming SiC film; a heat treatment step of heat-treating SiC film in a state where Si is supplied on the surface of SiC film; and a step of forming the facet obtained on the surface of SiC film by the heat treatment step into a channel. Thereby, it is possible to sufficiently improve the characteristics.
Claims2
A semiconductor device comprising
- a semiconductor film made of silicon carbide,
- wherein the semiconductor film includes first and second grooves spaced apart from one another, and wherein a surface of the semiconductor film, which is disposed between the first and second grooves and extends from the first groove to the second groove, includes a facet, wherein each groove is U-shaped with a substantially flat bottom and substantially vertical sidewalls, wherein the facet serves as a channel and comprises a first crystal (0001) face and a second crystal (03-38) or (01-14) face, the second crystal face having a greater area than the first crystal face, wherein the channel is formed along the (03-38) or (01-14) face.
Dependencies are inferred from the claim text.