Method for manufacturing a layer of gallium nitride or gallium and aluminum nitride
AssigneeSoitec
InventorHacene Lahreche
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Abstract
The present invention relates to a crack-free monocrystalline nitride layer having the composition AlxGa1−xN, where 0≦x≦0.3, and a substrate that is likely to generate tensile stress in the nitride layer. The structure successively includes the substrate; a nucleation layer; a monocrystalline intermediate layer having a selected thickness on the nucleation layer; a monocrystalline seed layer of an AlBN compound in which the boron content is between 0 and 10% having a selected thickness on the intermediate layer and a relaxation rate, at ambient temperature, of less than 80%; and the monocrystalline nitride layer.
Claims15
A structure comprising a crack-free monocrystalline nitride layer having the composition AlxGa1−xN, where 0≦x≦0.3, and a substrate that is likely to generate tensile stress in the nitride layer, the structure successively comprising:
- the substrate;
- a nucleation layer;
- a monocrystalline intermediate layer having a selected thickness on the nucleation layer;
- a monocrystalline seed layer of an AlBN compound in which the boron content is between 0 and 10% having a selected thickness on the intermediate layer and a relaxation rate, at ambient temperature, of less than 80%;
- and
- the monocrystalline nitride layer.
Dependencies are inferred from the claim text.