Semiconductor device and method of manufacturing same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorHideto Ohnuma
Life of this patent
Estimating the term…
Abstract
An object is to reduce the adverse influence which a portion of a gate insulating layer where the thickness has decreased, that is, a step portion, has on semiconductor element characteristics so that the reliability of the semiconductor element is improved. A semiconductor layer is formed over an insulating surface; a side surface of the semiconductor layer is oxidized using wet oxidation to form a first insulating layer; a second insulating layer is formed over the semiconductor layer and the first insulating layer; and a gate electrode is formed over the semiconductor layer and the first insulating layer with the second insulating layer interposed therebetween.
Claims12
A semiconductor device, comprising:
- a semiconductor layer formed over a substrate;
- a first insulating layer formed only on a side surface of the semiconductor layer, the first insulating layer surrounding the semiconductor layer;
- a second insulating layer comprising Hf formed over and in contact with the semiconductor layer and the first insulating layer;
- a gate electrode formed over the second insulating layer comprising Hf, the gate electrode overlapping with the semiconductor layer and the first insulating layer;
- a source electrode over the second insulating layer;
- and
- a drain electrode over the second insulating layer,
- wherein the source electrode is in contact with the semiconductor layer and the second insulating layer, and
- wherein the drain electrode is in contact with the semiconductor layer and the second insulating layer.
A semiconductor device, comprising:
- a semiconductor layer formed over a substrate;
- a first insulating layer formed only on a side surface of the semiconductor layer, the first insulating layer surrounding the semiconductor layer;
- a second insulating layer comprising Hf formed over and in contact with the semiconductor layer and the first insulating layer;
- a gate electrode formed over the second insulating layer comprising Hf, the gate electrode overlapping with the semiconductor layer and the first insulating layer;
- a third insulating layer formed over the gate electrode;
- a conductive layer over the third insulating layer, the conductive layer being electrically connected to the semiconductor layer;
- a source electrode over the third insulating layer;
- and
- a drain electrode over the third insulating layer,
- wherein the source electrode is in contact with the semiconductor layer and the second insulating layer,
- wherein the drain electrode is in contact with the semiconductor layer and the second insulating layer, and
- wherein the conductive layer overlaps with the first insulating layer.
A semiconductor device, comprising:
- a semiconductor layer formed over a substrate;
- a first insulating layer formed on a side surface of the semiconductor layer;
- a second insulating layer comprising Hf formed over and in contact with the semiconductor layer, the substrate and the first insulating layer;
- a charge storage layer over the semiconductor layer with the second insulating layer comprising Hf interposed therebetween;
- a third insulating layer over the charge storage layer;
- and
- a gate electrode formed over the third insulating layer, the gate electrode overlapping with the charge storage layer.
Dependencies are inferred from the claim text.