Thin film transistor
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsErika Takahashi, Takayuki Kato, Hidekazu Miyairi, Yasuhiro Jinbo
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Abstract
A thin film transistor is provided, which includes a gate electrode layer over a substrate, a gate insulating layer over the gate electrode layer, a layer including an amorphous semiconductor over the gate insulating layer, a pair of crystal regions over the layer including the amorphous semiconductor, and source and drain regions over and in contact with the pair of crystal regions. The source and drain regions include a microcrystalline semiconductor layer to which an impurity imparting one conductivity type is added.
Claims21
A thin film transistor comprising:
- a gate electrode layer over a substrate;
- a gate insulating layer over the gate electrode layer;
- a semiconductor layer including an amorphous semiconductor over the gate insulating layer;
- a pair of crystal regions over the semiconductor layer including the amorphous semiconductor;
- and
- source and drain regions over and in contact with the pair of crystal regions, the source and drain regions including a microcrystalline semiconductor layer,
- wherein the microcrystalline semiconductor layer includes an impurity imparting one conductivity type.
A thin film transistor comprising:
- a gate electrode layer over a substrate;
- a gate insulating layer over the gate electrode layer;
- a semiconductor layer including an amorphous semiconductor over the gate insulating layer;
- a pair of crystal regions over the semiconductor layer including the amorphous semiconductor;
- source and drain regions over and in contact with the pair of crystal regions, the source and drain regions including a first microcrystalline semiconductor layer;
- and
- a second microcrystalline semiconductor layer between the gate insulating layer and the semiconductor layer including the amorphous semiconductor,
- wherein the first microcrystalline semiconductor layer includes an impurity imparting one conductivity type.
A thin film transistor comprising:
- a gate electrode layer over a substrate;
- a gate insulating layer over the gate electrode layer;
- a semiconductor layer including an amorphous semiconductor over the gate insulating layer;
- a pair of crystal regions over the semiconductor layer including the amorphous semiconductor;
- source and drain regions over and in contact with the pair of crystal regions, the source and drain regions including a first microcrystalline semiconductor layer;
- and
- a second microcrystalline semiconductor layer between the semiconductor layer including the amorphous semiconductor and the pair of crystal regions, the second microcrystalline semiconductor layer containing a halogen element,
- wherein the first microcrystalline semiconductor layer includes an impurity imparting one conductivity type.
Dependencies are inferred from the claim text.