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US 8,283,659 B2Granted
Tetrahydrotetraazapentacenes in thin-film transistors
AssigneeXerox Corporation
InventorsMatthew A. Heuft, Yiliang Wu
Life of this patent
Estimating the term…
Abstract
Compounds of Formula (I) are disclosed: wherein R1-R14, x, y, and z are as defined herein. The compounds are useful as semiconducting materials for electronic devices such as thin-film transistors.
Claims20
A compound of Formula (I):
- wherein each R1, R2, R3, R4, R6, R8, R9, R10, R11, and R13 is independently selected from hydrogen, alkyl, alkenyl, alkynyl, substituted alkyl, substituted alkenyl, substituted alkynyl, aryl, substituted aryl, and halogen;
- each R5, R7, R12, and R14 is independently selected from hydrogen, alkyl, substituted alkyl, aryl, and substituted aryl;
- x is an integer from 1 to 3;
- y is an integer from 1 to 4;
- and z is an integer from 1 to 3.
2 more elements
A thin film transistor, comprising:
- a substrate;
- and
- a semiconducting layer on the substrate, the semiconducting layer comprising a tetrahydrotetraazaacene of Formula (I):
- wherein each R1, R2, R3, R4, R6, R8, R9, R10, R11, and R13 is independently selected from hydrogen, alkyl, alkenyl, alkynyl, substituted alkyl, substituted alkenyl, substituted alkynyl, aryl, substituted aryl, and halogen;
- each R5, R7, R12, and R14 is independently selected from hydrogen, alkyl, substituted alkyl, aryl, and substituted aryl;
- x is an integer from 1 to 3;
- y is an integer from 1 to 4;
- and z is an integer from 1 to 3.
5 more elements
Dependencies are inferred from the claim text.