Back to results
US 8,283,658 B2Granted
Semiconductor device and method for fabricating the same
AssigneeHynix Semiconductor Inc.
InventorKi-Beom Choe
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a conductive layer formed in the junction region and a boundary layer arranged to wrap a side and a bottom of the conductive layer.
Claims11
A semiconductor device comprising:
- a conductive layer formed in a junction region in a substrate;
- and
- a boundary layer arranged to wrap a side and a bottom of the conductive layer,
- wherein the boundary layer comprises an organic semiconductor having a conductivity type different from the substrate to insulate the substrate from the conductive layer when an operating voltage is not applied to the semiconductor device.
1 more element
A semiconductor device comprising:
- a conductive layer formed in a junction region in a substrate;
- a boundary layer formed between the conductive layer and a channel region and arranged to wrap a side and a bottom of the conductive layer, wherein the boundary layer comprises an organic semiconductor having a conductivity type different from the substrate to insulate the substrate from the conductive layer when an operating voltage is not applied to a gate;
- and
- the gate formed on the channel region and a portion of the boundary layer.
1 more element
Dependencies are inferred from the claim text.