Vertical light emitting diode (VLED) die having electrode frame and method of fabrication

A vertical light emitting diode (VLED) die comprising:

• a metal base;
• a mirror on the metal base having a width Wm and a length Lm;
• a p-type semiconductor layer on the mirror;
• a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light;
• an n-type semiconductor layer on the multiple quantum well (MQW) layer having a peripheral outline and a center;
• an electrode on the n-type semiconductor layer;
• and
• an electrode frame on the n-type semiconductor layer in electrical contact with the electrode configured to spread current from an outer periphery to a center of the n-type semiconductor layer, the electrode frame having a four-sided picture frame shape spaced from the peripheral outline of the n-type semiconductor layer by a distance d, the electrode frame having a peripheral width W greater than or equal to Wm, a peripheral length L greater than or equal to Lm, a wall width E and a thickness of dE.

A method for fabricating a vertical light emitting diode (VLED) die comprising:

• providing a metal base comprising a mirror having a width Wm and a length Lm, a p-type semiconductor layer on the mirror, a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light, and an n-type semiconductor layer on the multiple quantum well (MQW) layer having a peripheral outline;
• forming an electrode on the n-type semiconductor layer;
• and
• forming an electrode frame on the n-type confinement layer in electrical contact with the electrode, the electrode frame contained within the peripheral outline of the n-type semiconductor layer configured to spread current from an outer periphery of the n-type semiconductor layer to a center of the n-type semiconductor layer, the electrode frame having a four sided shape with an outer periphery width W and an outer periphery length L, and with the width Wm of the mirror less than or equal to the width W of the electrode frame and the length Lm of the mirror less than or equal to the length L of the electrode frame.