Flat lower bottom electrode for phase change memory cell

A method for fabricating lower bottom electrodes of a phase change memory device, the method comprising:

• forming a dielectric layer over a substrate including an array of conductive contacts;
• patterning a via having a low aspect ratio such that a depth of the via is less than a width thereof, to a contact surface of the substrate corresponding to each of the array of conductive contacts to be connected to access circuitry;
• etching the dielectric layer and depositing electrode material over the etched dielectric layer and within each via, the electrode material comprising ion metal plasma titanium and a layer of titanium nitride deposited on the ion metal plasma titanium;
• and
• planarizing the electrode material to form a plurality of lower bottom electrodes on each of the conductive contacts.