Semiconductive materials and associated uses thereof
AssigneeWashington State University Research Foundation
InventorsKelvin Lynn, Kelly Jones, Guido Ciampi
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Abstract
High rate radiation detectors are disclosed herein. The detectors include a detector material disposed inside the container, the detector material containing cadmium, tellurium, and zinc, a first dopant containing at least one of aluminum, chlorine, and indium, and a second dopant containing a rare earth metal. The first dopant has a concentration of about 500 to about 20,000 atomic parts per billion, and the second dopant has a concentration of about 200 to about 20,000 atomic parts per billion.
Claims15
A radiation detector, comprising:
- a container configured to at least reduce external electromagnetic radiation;
- and
- a detector material disposed inside the container, the detector material containing at least one element from Group II of the periodic table, at least one element from Group VI of the periodic table, a first dopant containing at least one element from Group III or Group VII of the periodic table, and a second dopant containing erbium (Er) having a concentration of about 10 atomic parts per billion to about 400,000 atomic parts per billion.
A photovoltaic device, comprising:
- a substrate layer;
- a contact layer opposite the substrate layer;
- and
- a detector layer disposed between the substrate layer and the contact layer, the detector layer containing at least one element from Group II of the periodic table, at least one element from Group VI of the periodic table, a first dopant containing at least one element from Group III or Group VII of the periodic table, and a second dopant containing erbium having a concentration of about 10 atomic parts per billion to about 400,000 atomic parts per billion.
A photovoltaic device, comprising:
- a P-type semiconductor;
- an N-type semiconductor opposite the P-type semiconductor;
- and
- a detector material between the P-type semiconductor and the N-type semiconductor, the detector material containing:
- a first element from Group II of the periodic table;
- a second element from Group VI of the periodic table, the second element and the first element forming a bulk material;
- a first dopant in the bulk material, the first dopant containing at least one element from Group III or Group VII of the periodic table;
- and
- a second dopant in the bulk material, the second dopant containing erbium having a concentration of about 10 atomic parts per billion to about 400,000 atomic parts per billion.
Dependencies are inferred from the claim text.